to-92l plastic-encapsulate transistors KTC3206 transistor (npn) feature z high breakdown voltage : v ceo =150v(min.) z low output capacitance : c ob =5.0pf(max.) z high transition frequency : f t =120mhz(typ.). maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 200 v v ceo collector-emitter voltage 150 v v ebo emitter-base voltage 5 v i c collector current -continuous 50 ma p c collector power dissipation 1 w t j junction temperature 150 t stg storage temperature range -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v(br) cbo i c = 100a , i e =0 200 v collector-emitter breakdown voltage v(br) ceo i c = 1ma, ib=0 150 v emitter-base breakdown voltage v(br) ebo i e = 100a, i c =0 5 v collector cut-off current i cbo v cb =200v, ie=0 0.1 a emitter cut-off current i ebo v eb =5v, ic=0 0.1 a dc current gain h fe v ce =5 v, ic= 10ma 70 240 collector-emitter saturation voltage v ce(sat) i c = 10m a, i b = 1ma 0.5 v base-emitter voltage v be(sat) i c = 10 ma, ib= 1ma 1 v transition frequency f t v ce = 30 v, i c = 10ma 120 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 5.0 pf classification of h fe rank o y range 70-140 120-240 to-92l 1. emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,feb,2013
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